s sf 401 5 ? silikron semiconductor co.,ltd. 20 13 . 0 7 . 19 version : 1. 3 page 1 of 6 www.silikron.com main product characteristics: v dss - 40 v r ds (on) 11 m (typ.) i d - 4 0 a features and benefits : description : absolute max rating : symbol parameter max. units id @ tc = 25c continuous drain current, vgs @ 10v - 4 0 a id @ tc = 100c continuous drain current, vgs @ 10v - 28 idm pulsed drain current - 120 ism pulsed source current (body diode) - 120 pd @tc = 25c power dissipation 75 w v ds drain - source voltage - 40 v vgs gate - to - source voltage 2 0 v eas single pulse avalanche energy @ l=0.1mh 40 mj ia s single pulse avalanche current @ l=0.1mh 28 a tj tstg operating junction and storage temperature r ange - 55 to + 1 75 c to - 252 (d - pak) marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for pwm, load switching a nd general purpose applications ? u ltra low on - resistance with low gate charge ? high power and current handing capability ? 1 75 operating temperature it utilizes the advanced trench processing techniques to ach ieve extremely low on resist ance and low gate charge . these features combine to make this design an extremely efficient and reliable device for use in pwm, load switching and a wide variety of other applications . SSF4015 ssf4035 ssf3612d ssf3612d d g s
ssf 401 5 ? silikron semiconductor co.,ltd. 20 1 3 . 0 7 . 19 version : 1. 3 page 2 of 6 www.silikron.com thermal resistance symbol characterizes value unit r j a junction - to - ambient ( t 10s ) 1 4 /w junction - to - ambient (pcb mounted, steady - state) 4 0 /w r ? jc maximum junction - to - case 2 /w electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions bvdss drain - to - source breakdown voltage - 40 v vgs = 0v, id = 250a rds(on) static drain - to - source on - resistance 1 1 15 m vgs =1 0v , id = 12 a tj = 1 25 14.3 18.5 25 vgs =4.5v , id = 8 a tj = 1 25 23.6 vgs(th) gate threshold voltage - 1 - 3 v vds = vgs, id = 250u a idss drain - to - source leakage current - 1 a vds = - 40 v,vgs = 0v - 5 tj = 55 c igss gate - to - source forward leakage 1 00 na vgs = 20 v gate - to - source reverse leakage - 1 00 vgs = - 20 v g(fs) forward transconductance 5 2 7 s vds= - 5v,id= - 12.0a qg total gate charge 57.4 40 nc id= - 20a, vdd= - 12v, vgs= - 10v qgs gate - to - sour ce charge 10.8 6 qgd gate - to - drain("miller") charge 1 1 . 9 15 td(on) turn - on delay time 1 5.2 ns vdd= - 18.8v,id= - 12.5a, rl=1.50,rg=3.00, vgs= - 10v tr rise time 2 3 . 7 td(off) turn - off delay time 5 3.3 tf fall time 1 2.7 ciss input capacitance 5 188 pf vds= - 20v, vgs=0v, f=1mhz coss output capacitance 3 76 crss reverse transfer capacita nce 2 93
ssf 401 5 ? silikron semiconductor co.,ltd. 20 1 3 . 0 7 . 19 version : 1. 3 page 3 of 6 www.silikron.com source - drain ratings and characteristics symbol parameter min. typ. max . units conditions is maximum body - diode continuous curren - 40 a vsd diode forward voltage - 0.7 4 1 .2 v tj = 2 5 ? c,is= - 1 a,vgs=0v test circuits and waveforms e as test circuit: gate charge test circuit: switching time test circuit: switch ing waveforms: n otes : calculated continuous current based on max imum allowable junction temperature. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - case thermal resistance . the value of r j a is meas ured with the device mounted on 1 in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c
ssf 401 5 ? silikron semiconductor co.,ltd. 20 1 3 . 0 7 . 19 version : 1. 3 page 4 of 6 www.silikron.com mechanical data
ssf 401 5 ? silikron semiconductor co.,ltd. 20 1 3 . 0 7 . 19 version : 1. 3 page 5 of 6 www.silikron.com ordering and marking information device marking: ssf 401 5 package (available) to - 2 52 operating temperature range c : - 55 to 1 75 oc devices per unit option1 package type units/ tube tubes/inner box units/inner box inner boxes/car ton box units/carton box to - 252 80 50 4000 10 40 000 option2 units/ tape tape s/inner box units/inner box inner boxes/carton box units/carton box to - 2 52 2500 2 5000 7 35000 option 3 units/ tape tape s/inner box units/inner box i nner boxes/carton box units/carton box to - 2 52 2500 1 25 00 10 25 000
ssf 401 5 ? silikron semiconductor co.,ltd. 20 1 3 . 0 7 . 19 version : 1. 3 page 6 of 6 www.silikron.com attention: any and all silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabi lity, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any sil ikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should a lways evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is pos sible that these probabilistic failures could give rise to accident s or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that th ese kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(inclu ding technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accorda nce with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and re liable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to pr oduct/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the silikron product that you intend to use. customer service worldwide sales and service: sales@ silikron .com technical support: technical@ silikron .com suzhou silikron semiconductor corp. building 11a suchun industrial square, 428# xinglong street, suzhou p.r. chin a tel: (86 - 512 ) 62560688 fax: (86 - 512 ) 65160705 e - mail: sales@ silikron .com
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